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PSMN4R0-60YS_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 4.0 mΩ standard level FET
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NXP Semiconductors
PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
VGSth
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
voltage
Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
IDSS
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 63 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 125 °C
VDS = 63 V; VGS = 0 V; Tj = 125 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 175 °C;
resistance
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
Fig. 14; Fig. 15
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
Fig. 14; Fig. 15
QGS(th)
pre-threshold gate-
source charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
Fig. 14
QGS(th-pl)
post-threshold gate-
source charge
QGD
gate-drain charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
Fig. 14; Fig. 15
VGS(pl)
gate-source plateau
voltage
VDS = 30 V; Fig. 14; Fig. 15
PSMN4R0-60YS
All information provided in this document is subject to legal disclaimers.
Product data sheet
14 May 2015
Min Typ Max Unit
54
-
-
V
63
-
-
V
2
3
4
V
-
-
4.6 V
0.95 -
-
V
-
0.05 5
µA
-
0.07 7
µA
-
-
100 µA
-
3.25 150 µA
-
2
100 nA
-
2
100 nA
-
7.6 12
mΩ
-
-
8.3 mΩ
-
3.6 4
mΩ
-
0.7 -
Ω
-
56
-
nC
-
47.5 -
nC
-
18.7 -
nC
-
10.3 -
nC
-
8.4 -
nC
-
11.2 -
nC
-
4.9 -
V
© NXP Semiconductors N.V. 2015. All rights reserved
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