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| PSMN4R0-60YS_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 4.0 mΩ standard level FET | |||
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NXP Semiconductors
PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
103
ID
(A)
102
Limit R DSon = VDS/ ID
tp = 10 µs
100 µs
003aad808
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
1
10
102
103
VDS(V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
8. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
Min Typ Max Unit
-
0.5 1.1 K/W
1
Zth(j-mb)
(K/W) d = 0.5
0.2
10-1
0 .1
003aad846
0.05
10-2 0.02
single shot
P
δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s)
1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN4R0-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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