PSMN4R0-60YS_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 4.0 mΩ standard level FET

NXP Semiconductors
PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
5
V_GS(th)
(V)
4
3
2
1
003aad280
2 .4
a
2
max
1 .6
typ
1 .2
min
0 .8
0 .4
003aad696
0
- 60
0
60
120
180
T_j (°C)
0
-6 0
0
60
120
180
Tj (°C)
Fig. 11. Gate-source threshold voltage as a function of Fig. 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature.
20
R_DSon
(mΩ)
16
V_GS (V) = 4
003aad814
V_DS
I_D
12
8
4
0
0
5
6
7 10
20
40
60
80
100
I_D (A)
V_GS(pl)
V_GS(th)
V_GS
Q_GS1
Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
PSMN4R0-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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