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PSMN4R0-60YS_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 4.0 mΩ standard level FET
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NXP Semiconductors
PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
Symbol
Parameter
IDM
peak drain current
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 2
[1]
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tmb = 25 °C
[1]
pulsed; tp ≤ 10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 60 V; RGS = 50 Ω; unclamped
[1] Continuous current is limited by package.
120
Pder
(%)
03aa16
120
ID
(A)
100
(1)
80
80
Min Max Unit
-
100 A
-
418 A
-55 175 °C
-55 175 °C
-
260 °C
-
100 A
-
418 A
-
170 mJ
003aad807
60
40
40
20
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN4R0-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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