PSMN4R0-60YS_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 4.0 mΩ standard level FET

NXP Semiconductors
PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
6000
C
(pF)
4000
003aad817
C_iss
C_rss
100
I_D
(A)
80
V_GS (V) = 10
7
60
5.5
6
003aad811
5
2000
40
4.5
0
0
3
6
9
12
V_GS (V)
Fig. 7. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
20
4
0
0
0.2
0.4
0.6
0.8
1
V_DS (V)
Fig. 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
100
I_D
(A)
80
003aad812
10^{- 1}
I_D
(A)
10^{- 2}
03aa35
min typ max
60
10^{- 3}
40
T_j = 175 C
T_j = 25 C
20
10^{- 4}
10^{- 5}
0
0
2
4 _{VGS (V)} 6
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
PSMN4R0-60YS
Product data sheet
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14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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