PSMN4R0-60YS_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 4.0 mΩ standard level FET

PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
14 May 2015
Product data sheet
1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of telecom, industrial and domestic
equipment.
2. Features and benefits
• Advanced TrenchMOS provides low R_DSon and low gate charge
• High efficiency in switching power converters
• Improved mechanical and thermal characteristics
• LFPAK provides maximum power density in a Power SO8 package
3. Applications
• DC-to-DC converters
• Lithium-ion battery protection
• Load switching
• Motor control
• Server power supplies
• Telecom power
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; Fig. 2
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 15 A; T_j = 100 °C;
resistance
Fig. 12
V_GS = 10 V; I_D = 15 A; T_j = 25 °C;
Fig. 13
Min Typ Max Unit
-
-
60
V
[1]
-
-
100 A
-
-
130 W
-55 -
175 °C
-
-
8.3 mΩ
-
3.6 4
mΩ
Scan or click this QR code to view the latest information for this product