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PSMN063-150D Datasheet, PDF (9/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
6. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A
A2
b2
A1
D1
mounting
base
E1
D
HE
L2
2
1
L
3
b1
e
b
wM A
e1
L1
c
0
10 20 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
A1(1)
A2
b
b1
max.
b2
c
D D1 E E1
max. max. max. min.
e
e1
HE
max.
L
L1
min.
L2
mm 2.38 0.65 0.89 0.89
2.22 0.45 0.71 0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22 4.81 6.73
5.98 4.45 6.47
4.0 2.285 4.57 10.4 2.95
9.6 2.55
0.5
0.7
0.5
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
SOT428
TO-252
SC-63
w
y
max.
0.2 0.2
ISSUE DATE
98-04-07
99-09-13
Fig 15. SOT428 (D-PAK).
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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