PSMN063-150D Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
4. Thermal characteristics
Table 3:
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
Figure 4
Vertical in still air
4.1 Transient thermal impedance
Value
Unit
1.0
K/W
50
K/W
10
Zth(j-mb)
(K/W)
1
10-1
10-2
δ=
0.5
0.2
0.1
0.05
0.02
single pulse
003aaa149
P
δ = ^tp
T
tp
t
T
10-310-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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