PSMN063-150D Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
30
IS
(A)
20
10
003aaa156
Tj = 175 ^oC
Tj = 25 ^oC
12
VGS
(V)
8
4
003aaa155
VDD = 30 V
VDD = 120 V
0
0
0.4
0.8
1.2
VSD (V)
0
0
20
40
60
QG (nC)
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 30 A; V_DD = 30 V and 120 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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