PSMN063-150D Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
30
ID
(A)
20
10
0
0
VGS (V) = 10
8.0
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6.0
5.4
5.2
5.0
4.8
4.6
4.4
0.4
0.8
1.2
1.6
2.0
VDS (V)
30
ID
(A)
20
10
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Tj = 175 ^oC
25 ^oC
0
0
2
4
6
8
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.20
RDSon
4.4 _{4.6 4.8}
(Ω)
5.0
0.16
5.2
0.12
5.4
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0.08
0.04
0
0
6
VGS (V) = 8 10
5
10 15
20 25 30
ID (A)
2.8
a
2.4
2.0
1.6
03aa30
1.2
0.8
0.4
-60 _-20
20
60
100 ¹⁴⁰ 180
Tj (oC)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a= -_R---_D----^R_S---_o-^D--_n-^S-₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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