PSMN063-150D Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
5
VGS(th)
(V)
4
3
2
1
0
-60
0
max
typ
min
03aa32
60
120
180
Tj (ºC)
10-1
ID
(A)
10-2
10-3
10-4
10-5
10-6
0
min
2
03aa35
typ _max
4
6
VGS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
gfs
(S)
30
20
10
003aaa153
Tj = 25 ^oC
Tj = 175 ^oC
104
C
(pF)
103
102
Ciss
Coss
Crss
003aaa154
0
0
10
20
ID (A) ³⁰
T_j = 25 °C; V_DS > I_D × R_DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
10
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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