PSMN063-150D Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
120
P_der
(%)
80
03aa16
120
I _der
(%)
80
03aa24
40
40
0
0
50
100
P_der
=
-------^P----^t--^o---^t-------
P
×
100%
t o t ( 25 ^°C )
150
200
T_mb (^oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
102
RDSon = VDS / ID
10
1
0
0
50
100
150
200
T_mb (^oC)
V_GS ≥ 10 V
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
003aaa148
tp = 10 µs
100 µs
DC
1 ms
100 ms
10 ms
10-1
1
10
102
103
VDS (V)
T_mb = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
3 of 12