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PSMN063-150D Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 150 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 15 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
ID = 30 A; VDS = 120 V;
VGS = 10 V; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 75 V; RD = 2.7 Ω;
VGS = 10 V; RG = 5.6 Ω
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
voltage
Figure 13
trr
reverse recovery time
IS = 20 A;
Qr
recovered charge
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
Min
Typ
Max
Unit
150
−
−
V
133
−
−
V
2
3
4
V
1
−
−
V
−
−
6
V
−
0.05
10
µA
−
−
500
µA
−
0.02
100
nA
−
60
63
mΩ
−
−
176
mΩ
−
55
−
nC
−
10
−
nC
−
20
27
nC
−
2390
−
pF
−
240
−
pF
−
98
−
pF
−
14
−
ns
−
50
−
ns
−
48
−
ns
−
38
−
ns
−
0.9
1.2
V
−
105
−
ns
−
0.55
−
µC
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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