PSMN063-150D Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PSMN063-150D
N-channel enhancement mode field-effect transistor
Rev. 03 — 31 October 2001
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS¹ technology.
Product availability:
PSMN063-150D in SOT428 (D-PAK).
1.2 Features
s TrenchMOS™ technology
s Fast Switching
s Very low on-state resistance
s Low thermal resistance
1.3 Applications
s DC to DC converters
s Switched mode power supplies
1.4 Quick reference data
s V_DS = 150 V
s P_tot = 150 W
s I_D = 29 A
s R_DSon ≤ 63 mΩ
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
2
drain (d)
[1]
mb
3
source (s)
mb
connected to drain (d)
2
1
Top view
3
MBK091
[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s
1. TrenchMOS™ is a trademark of Koninklijke Philips Electronics N.V.