PSMN063-150D Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN063-150D
N-channel enhancement mode field-effect transistor
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T_j = 25 to 175 ^oC
−
T_j = 25 to 175 ^oC; R_GS = 20 kΩ
−
−
T_mb = 25 °C; V_GS = 10 V;
−
Figure 2 and 3
150
V
150
V
±20
V
29
A
T_mb = 100 °C; V_GS = 10 V;
−
20
A
Figure 2 and 3
I_DM
peak drain current
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; −
Figure 3
116
A
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
T_mb = 25 °C; Figure 1
−
150
W
−55
+175
°C
−55
+175
°C
I_S
source (diode forward) current (DC) T_mb = 25 °C
−
I_SM
peak source (diode forward) current T_mb = 25 °C; pulsed; t_p ≤ 10 µs
−
Avalanche ruggedness
29
A
116
A
E_AS
non-repetitive avalanche energy
I_AS
non-repetitive avalanche current
unclamped inductive load;
−
I_D = 26 A; t_p = 0.2 ms;
V_DD ≤ 25 V; R_GS = 50 Ω;
V_GS = 10 V; starting T_j = 25 °C
unclamped inductive load;
−
V_DD ≤ 25 V; R_GS = 50 Ω;
V_GS = 10 V; starting T_j = 25 °C
502
mJ
29
A
9397 750 08594
Product data
Rev. 03 — 31 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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