PMCM6501VPE_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET

NXP Semiconductors
-5
V_GS
(V)
-4
aaa-019243
-3
-2
-1
0
0
5
10
15
20
25
Q_G (nC)
I_D = -3 A; V_DS = -6 V; T_amb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
-1.2
I_S
(A)
-0.8
PMCM6501VPE
12 V, P-channel Trench MOSFET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1
Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-019244
Tj = 150 °C
-0.4
Tj = 25 °C
V_GS = 0 V
0
0
-0.4
-0.8
-1.2
V_SD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t₂
duty cycle δ =
t₁
t₂
t₁
Fig. 18. Duty cycle definition
PMCM6501VPE
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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