PMCM6501VPE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET

PMCM6501VPE
12 V, P-channel Trench MOSFET
10 August 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level
Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage
• Ultra small package: 0.98 × 1.48 × 0.35 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Battery switch
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
-12 V
V_GS
gate-source voltage
-8
-
8
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-8.2 A
Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -3.0 A; T_j = 25 °C
resistance
-
19
25
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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