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PMCM6501VPE_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET
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NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = -12 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -3.0 A; Tj = 25 °C
VGS = -4.5 V; ID = -3.0 A; Tj = 150 °C
VGS = -2.5 V; ID = -3.0 A; Tj = 25 °C
VGS = -1.8 V; ID = -1.0 A; Tj = 25 °C
gfs
forward
VDS = -6.0 V; ID = -3.0 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = -6 V; ID = -3 A; VGS = -4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = -6 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = -6 V; ID = -6 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = -1.2 A; VGS = 0 V; Tj = 25 °C
PMCM6501VPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2015
Min Typ Max Unit
-12 -
-
V
-0.4 -0.6 -0.9 V
-
-
-1
µA
-
-
-10 µA
-
-
10
µA
-
-
-1
µA
-
-
1
µA
-
-
-200 nA
-
-
200 nA
-
19
25
mΩ
-
26
34
mΩ
-
25
33
mΩ
-
37
60
mΩ
-
13
-
S
-
12.6 -
Ω
-
19.6 29.4 nC
-
2.7 -
nC
-
5
-
nC
-
1400 -
pF
-
430 -
pF
-
400 -
pF
-
8
-
ns
-
51
-
ns
-
72
-
ns
-
62
-
ns
-
-0.9 -1.2 V
© NXP Semiconductors N.V. 2015. All rights reserved
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