PMCM6501VPE_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET

NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
-20
I_D
(A)
-15
-4.5 V
-2.5 V
-1.8 V
aaa-019235
-1.6 V
-10^-3
I_D
(A)
-10^-4
aaa-019236
(1)
(2)
(3)
-10
-1.4 V
-10^-5
-5
V_GS = -1.2 V
0
0
-1
-2
-3
-4
V_DS (V)
T_j = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
-10^-6
0
-0.2
-0.4
-0.6
T_j = 25 °C; V_DS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
-0.8
-1.0
V_GS (V)
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
100
R_DSon
(mΩ)
80
-1.4 V
-1.6 V
aaa-019237
-1.8 V
100
R_DSon
(mΩ)
80
aaa-019238
60
60
40
40
-2.5 V
20
20
V_GS = -4.5 V
Tj = 150 °C
Tj = 25 °C
0
0
-5
T_j = 25 °C
-10
-15
-20
-25
I_D (A)
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
-1
-2
-3
-4
-5
V_GS (V)
I_D = -3 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMCM6501VPE
Product data sheet
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10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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