PMCM6501VPE_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET

NXP Semiconductors
120
P_der
(%)
80
017aaa123
PMCM6501VPE
12 V, P-channel Trench MOSFET
120
I_der
(%)
80
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40
40
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 2.
MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 3.
MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
-10²
I_D
(A)
-10
Limit R_DSon = V_DS/I_D
t_p = 10 µs
t_p = 100 µs
aaa-019234
-1
-10^-1
DC; T_sp = 25 °C
DC; T_amb = 25 °C;
drain mounting pad 6 cm²
t_p = 1 ms
t_p = 10 ms
t_p = 100 ms
-10^-2
-10^-1
-1
I_DM = single pulse
-10
-10²
V_DS (V)
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
PMCM6501VPE
Product data sheet
Conditions
in free air
[1]
[2]
[3]
All information provided in this document is subject to legal disclaimers.
10 August 2015
Min Typ Max Unit
-
180 225 K/W
-
65
85
K/W
-
75
95
K/W
© NXP Semiconductors N.V. 2015. All rights reserved
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