PMCM6501VPE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET

NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
-5
I_D
(A)
-4
aaa-019239
2.0
a
1.5
aaa-019240
-3
1.0
-2
-1
Tj = 150 °C
0
0
-0.5
V_DS > I_D × R_DSon
Tj = 25 °C
-1.0
-1.5
-2.0
V_GS (V)
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.5
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
-1.2
V_GS(th)
(V)
-0.8
-0.4
aaa-019241
(3)
(2)
(1)
10⁴
C
(pF)
10³
aaa-019242
(1)
(2)
(3)
0
-60
0
60
I_D = -0.25 mA; V_DS = V_GS
(1) minimum values
(2) typical values
(3) maximum values
120
180
T_j (°C)
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
10²
-10^-1
-1
-10
-10²
V_DS (V)
f = 1 MHz; V_GS = 0 V
(1) C_iss
(2) C_oss
(3) C_rss
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMCM6501VPE
Product data sheet
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10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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