PMCM6501VPE_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET

NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
V_GS = -4.5 V; T_amb = 25 °C
[1]
V_GS = -4.5 V; T_amb = 100 °C
[1]
I_DM
peak drain current
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
P_tot
total power dissipation
T_amb = 25 °C
[2]
[1]
T_sp = 25 °C
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Source-drain diode
I_S
source current
T_amb = 25 °C
[1]
Min Max Unit
-
-12 V
-8
8
V
-
-8.2 A
-
-6.2 A
-
-4
A
-
-25 A
-
556 mW
-
1300 mW
-
12500 mW
-55 150 °C
-55 150 °C
-65 150 °C
-
-1.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMCM6501VPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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