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| PMCM6501VPE_15 Datasheet, PDF (5/15 Pages) NXP Semiconductors – 12 V, P-channel Trench MOSFET | |||
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NXP Semiconductors
PMCM6501VPE
12 V, P-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
in free air; t ⤠5 s
thermal resistance
from junction to solder
point
Min Typ Max Unit
[3]
-
45
55
K/W
-
5
10
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 4-layer 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103
aaa-013880
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.50
0.33 0.25
0.20
0.10
0.05
10
0
0.02
0.01
1
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102 duty cycle = 1
aaa-013881
Zth(j-a)
(K/W)
0.75
0.50
0.33 0.25
0.20
0.10
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
FR4 PCB, mounting pad for drain 6 cm2
10
102
103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMCM6501VPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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