PSMN1R0-30YLC_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
10^-1
ID
(A)
10^-2
10^-3
003a a e 948
Min Typ Ma x
3
VGS (th)
(V) _{Ma x (1 mA)}
2
003a a e 947
ID = 5mA
1mA
10^-4
1 Min (5mA)
10^-5
10^-6
0
1
2
3
VGS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
-6 0
0
60
120
180
Tj ( C)
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
8
RDS on
(mW)
6
4
2
003a a e 945
2.4
VGS (V) =2.6
2 .8
3 .0
3.5
2
a
1 .5
1
0 .5
003a a e 946
4 .5V
VGS = 10V
4.5
10
0
0
25
50
75 _{ID (A)} 100
0
-6 0
0
60
120
180
Tj ( C)
Fig. 12. Drain-source on-state resistance as a function Fig. 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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