PSMN1R0-30YLC_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
Symbol
Parameter
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Conditions
V_GS = 4.5 V; I_D = 25 A; V_DS = 15 V;
Fig. 14; Fig. 15
V_GS = 4.5 V; I_D = 25 A; V_DS = 15 V;
Fig. 15; Fig. 14
Min Typ Max Unit
-
14.6 26
nC
-
50
70
nC
[1] Continuous current is limited by package.
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
mb
2
S
source
3
S
source
4
G
mb
D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R0-30YLC
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN1R0-30YLC
Marking code
1C030L
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
25 °C ≤ T_j ≤ 175 °C
V_DGR
PSMN1R0-30YLC
drain-gate voltage
25 °C ≤ T_j ≤ 175 °C; R_GS = 20 kΩ
All information provided in this document is subject to legal disclaimers.
Product data sheet
15 January 2015
Min Max Unit
-
30
V
-
30
V
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 14