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| PSMN1R0-30YLC_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
104
ID
(A)
103
102
10
1
PSMN1R0-30YLC
N-channel 30 V 1.15 m⦠logic level MOSFET in LFPAK using
NextPower technology
003a a e 941
Limit R DSon = VDS / ID
DC
tp =10 ms
100 ms
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
103
IAL
(A)
102
10
003a a e 954
(1)
(2)
1
10-1
10-3
10-2
10-1
1
10
tAL (ms )
Fig. 4. Single pulse avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min Typ Max Unit
-
0.45 0.55 K/W
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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