PSMN1R0-30YLC_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
100
ID
(A)
75
50
3 .0 2.8
4.5
10.0
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
003a a e 943
2.6
8
RDS on
(mW)
6
003a a e 944
VGS (V) = 2.4
4
25
2
2.2
0
0
0.5
1
VDS (V)
0
0
4
8
12
16
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
300
gfs
(S )
240
003a a e 949
180
120
60
0
0
25
50
75
100
ID (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
100
ID
(A)
75
003a a e 951
50
Tj = 150 C
25
Tj = 25 C
0
0
1
2
3 _{VGS (V)} 4
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN1R0-30YLC
Product data sheet
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15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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