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PSMN1R0-30YLC_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology
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NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
1
Z th(j-m b)
(K/W)
d = 0.5
003a ae942
10-1 0.2
0.1
0.05
0.02
10-2
P
d=
tp
T
s ing le s hot
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s ) 1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10
ID = 10 mA; VDS = VGS; Tj = 150 °C;
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 150 °C;
Fig. 12; Fig. 13
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2015
Min Typ Max Unit
30
-
-
V
27
-
-
V
1.05 1.41 1.95 V
0.5 -
-
V
-
-
2.25 V
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
-
100 nA
-
1.1 1.4 mΩ
-
-
2.4 mΩ
-
0.85 1.15 mΩ
-
-
1.85 mΩ
© NXP Semiconductors N.V. 2015. All rights reserved
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