PSMN1R0-30YLC_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
15 January 2015
Product data sheet
1. General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
• High reliability Power SO8 package, qualified to 175°C
• Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
• Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
• Ultra low Rdson and low parasitic inductance
3. Applications
• DC-to-DC converters
• Lithium-ion battery protection
• Load switching
• Power OR-ing
• Server power supplies
• Sync rectifier
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage 25 °C ≤ T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 2
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
Fig. 12
Min Typ Max Unit
-
-
30
V
[1]
-
-
100 A
-
-
272 W
-55 -
175 °C
-
1.1 1.4 mΩ
-
0.85 1.15 mΩ
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