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| PSMN1R0-30YLC_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 m⦠logic level MOSFET in LFPAK using
NextPower technology
Symbol
Parameter
Conditions
VGS
gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1]
VGS = 10 V; Tmb = 100 °C; Fig. 2
[1]
IDM
peak drain current
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 3
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage MM (JEDEC JESD22-A115)
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
ISM
peak source current
pulsed; tp ⤠10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ⤠30 V; RGS = 50 Ω; unclamped;
Fig. 4
Min Max Unit
-20 20
V
-
272 W
-
100 A
-
100 A
-
1450 A
-55 175 °C
-55 175 °C
-
260 °C
960 -
V
-
100 A
-
1450 A
-
259 mJ
[1] Continuous current is limited by package.
120
Pder
(%)
80
03na19
400
ID
(A)
320
240
003a a e 940
160
40
(1)
80
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0
50
100
150
200
Tmb ( C)
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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