PSMN020-30MLC_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

NXP Semiconductors
PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 12. Gate charge waveform definitions
10
V_GS
(V)
8
003aak279
6
24 V
4
15 V
V_GS = 8 V
2
0
0
2
4
6
8
10
Q_G (nC)
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
10³
C
(pF)
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C_iss
40
I_S
(A)
30
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10²
C_oss
20
C_rss
10
10
10^-1
1
10
10²
V_DS (V)
150°C
T_j = 25°C
0
0
0.2 0.4 0.6 0.8
1
1.2
V_SD (V)
Fig. 14. Input, output and reverse transfer capacitances Fig. 15. Source current as a function of source-drain
as a function of drain-source voltage; typical
voltage; typical values
values
PSMN020-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 September 2012
© NXP B.V. 2012. All rights reserved
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