PSMN020-30MLC_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

NXP Semiconductors
Symbol
Parameter
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
Conditions
Min Max Unit
V_GS = 10 V; T_j(init) = 25 °C; I_D = 31 A;
V_sup ≤ 30 V; R_GS = 50 Ω; unclamped;
Fig. 3
-
7.7 mJ
40
I_D
(A)
30
003aak267
120
P_der
(%)
80
03na19
20
40
10
0
0
30
60
90 120 150 180
T_j (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
10²
I_AL
(A)
10
1
003aak268
(1)
(2)
10^-1
10^-3
10^-2
10^-1
1
10
t_AL (ms)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN020-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 September 2012
© NXP B.V. 2012. All rights reserved
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