PSMN020-30MLC_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33
using TrenchMOS Technology
4 September 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
• Low parasitic inductance and resistance
• Optimised for 4.5V Gate drive utilising Superjunction technology
• Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
1.3 Applications
• DC-to-DC converters
• Load switching
• Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j = 25 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 5 A; T_j = 25 °C;
resistance
Fig. 10
V_GS = 10 V; I_D = 5 A; T_j = 25 °C; Fig. 10
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 4.5 V; I_D = 5 A; V_DS = 15 V;
Fig. 12; Fig. 13
Q_G(tot)
total gate charge
V_GS = 4.5 V; I_D = 5 A; V_DS = 15 V;
Fig. 12; Fig. 13
Min Typ Max Unit
-
-
30
V
-
-
31.8 A
-
-
33
W
-55 -
175 °C
-
20.5 27
mΩ
-
14.7 18.1 mΩ
-
1.7 -
nC
-
4.6 -
nC
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