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| PSMN020-30MLC_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology | |||
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NXP Semiconductors
103
ID
(A)
102
10
PSMN020-30MLC
N-channel 30 V 18.1 m⦠logic level MOSFET in LFPAK33 using
TrenchMOS Technology
003aak269
Limit RDSon = VDS / ID
DC
tp = 10 us
100 us
1
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1 0.02
single shot
Min Typ Max Unit
-
4.32 4.56 K/W
003aak270
P
tp
δ= T
10-2
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN020-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 September 2012
© NXP B.V. 2012. All rights reserved
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