PSMN020-30MLC_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

NXP Semiconductors
PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN020-30MLC
LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 4
leads
Version
SOT1210
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
V_GS = 10 V; T_mb = 100 °C; Fig. 1
I_DM
peak drain current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; Fig. 4
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
V_ESD
electrostatic discharge voltage MM (JEDEC JESD22-A115)
Source-drain diode
I_S
source current
T_mb = 25 °C
I_SM
peak source current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
Min Max Unit
-
30
V
-20 20
V
-
31.8 A
-
22.5 A
-
127 A
-
33
W
-55 175 °C
-55 175 °C
-
260 °C
130 -
V
-
27.4 A
-
127 A
PSMN020-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 September 2012
© NXP B.V. 2012. All rights reserved
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