PSMN020-30MLC_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

NXP Semiconductors
PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
25
g_fs
(S)
20
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40
I_D
(A)
30
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15
20
10
5
0
0 5 10 15 20 25 30 35 40
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
10
150°C
T_j = 25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_GS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
80
R_DSOonN
2.8 V
3V
60
40
20
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3.5 V
4.5 V
V_GS = 10 V
2
a
1.6
1.2
0.8
0.4
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V_GS = 4.5 V
10 V
0
0 5 10 15 20 25 30 35 40
I_D (A)
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN020-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 September 2012
© NXP B.V. 2012. All rights reserved
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