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NPIC6C4894_15 Datasheet, PDF (8/21 Pages) NXP Semiconductors – Power logic 12-bit shift register open-drain outputs
NXP Semiconductors
NPIC6C4894
Power logic 12-bit shift register; open-drain outputs
10. Static characteristics
Table 6. Static characteristics
At recommended operating conditions unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
Tamb = 25 C
Tamb = 40 C to 125 C Unit
Min Typ Max Min Typ Max
VIH
HIGH-level
input voltage
0.85VCC -
-
-
-
-V
VIL
LOW-level
input voltage
-
- 0.15VCC -
-
-V
VOH
HIGH-level QSn; VI = VIH or VIL
output voltage IO = 20 A; VCC = 4.5 V
IO = 4 mA; VCC = 4.5 V
VOL
LOW-level QSn; VI = VIH or VIL
output voltage IO = 20 A; VCC = 4.5 V
IO = 4 mA; VCC = 4.5 V
II
input leakage VCC = 5.5 V; VI = VCC or GND
current
4.4 4.49
-
4.0 4.2
-
-
-
-V
-
-
-V
- 0.005 0.1
-
-
-V
-
0.3 0.5
-
-
-V
-
-
1
-
-
- A
V(BR)DSS drain-source
breakdown
voltage
QPn; IO = 1 mA
33 37
-
-
-
-V
VSD
source-drain QPn; IO = 100 mA
voltage
1.2 0.85 -
-
-
-V
ICC
supply current VCC = 5.5 V; VI = VCC or GND
OE = LOW
- 0.006 200
-
-
- A
OE = HIGH
-
0.01 500
-
-
- A
OE = LOW; CP = 5 MHz;
see Figure 15 and Figure 17
-
1
5
-
-
- mA
IO
output current QPn; VO = 0.5 V
[1][2][3]
-
140
-
-
-
- mA
IOZ
OFF-state
QPn; VCC = 5.5 V; VDS = 30 V
output current
- 0.002 0.2
-
0.15 0.3 A
RDSon drain-source see Figure 18 and Figure 19
[1][2]
on-state
resistance
VCC = 4.5 V; IO = 50 mA
- 2.7 9
VCC = 4.5 V; IO = 100 mA
- 2.8 10
- 4.3 12

-
-
-
[1] Technique should limit Tj  Tamb to 10 C maximum.
[2] These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
[3] The output current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5 V.
NPIC6C4894
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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