NPIC6C4894_15 Datasheet, PDF(1/21 Page) NXP Semiconductors – Power logic 12-bit shift register open-drain outputs

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NPIC6C4894_15 Datasheet, PDF (1/21 Pages) NXP Semiconductors – Power logic 12-bit shift register open-drain outputs

NPIC6C4894

Power logic 12-bit shift register; open-drain outputs

Rev. 1 â 17 April 2014

Product data sheet

1. General description

The NPIC6C4894 is a 12-stage serial shift register. It has a storage latch associated with

each stage for strobing data from the serial input (D) to the parallel open-drain outputs

(QP0 to QP11). Data is shifted on positive-going clock (CP) transitions. The data in each

shift register stage is transferred to the storage register when the latch enable (LE) input is

HIGH. Data in the storage register drives the gate of the output extended-drain NMOS

transistor whenever the output enable input (OE) is HIGH. A LOW on OE causes the

outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect

the state of the registers. Two serial outputs (QS1 and QS2) are available for cascading a

number of NIC6C4894 devices. Serial data is available at QS1 on positive-going clock

edges to allow high-speed operation in cascaded systems with a fast clock rise time. The

same serial data is available at QS2 on the next negative going clock edge. It is used for

cascading NPIC6C4894 devices when the clock has a slow rise time. The open-drain

outputs are 33 V/100 mA continuous current extended-drain NMOS transistors designed

for use in systems that require moderate load power such as LEDs. Integrated voltage

clamps in the outputs, provide protection against inductive transients. This protection

makes the device suitable for power driver applications such as relays, solenoids and

other low-current or medium-voltage loads.

2. Features and benefits

ï® Specified from ï40 ï°C to +125 ï°C

ï® Low RDSon

ï® 12 Power EDNMOS transistor outputs of 100 mA continuous current

ï® 250 mA current limit capability

ï® Output clamping voltage 33 V

ï® 30 mJ avalanche energy capability

ï® Low power consumption

ï® Latch-up performance exceeds 100 mA per JESD 78 Class II level A

ï® ESD protection:

ïµ HBM JS-2011 Class 2 exceeds 2500 V

ïµ CDM JESD22-C101E exceeds 1000 V

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