BFT93W_15 Datasheet, PDF (2/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
FEATURES
 High power gain
 Gold metallization ensures
excellent reliability
 SOT323 (S-mini) package.
APPLICATIONS
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
handbook, 2 columns
3
BFT93W uses the same crystal as the
SOT23 version, BFT93.
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
1
Top view
2
MBC870
BFT93W Marking code: X1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
F
T_j
collector-base voltage
open emitter
collector-emitter voltage
open base
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
up to T_s = 93 C; note 1
I_C = 30 mA; V_CE = 5 V
I_C = 0; V_CE = 5 V; f = 1 MHz
I_C = 30 mA; V_CE = 5 V;
f = 500 MHz
maximum unilateral power gain I_C = 30 mA; V_CE = 5 V;
f = 500 MHz; T_amb = 25 C
noise figure
I_C = 10 mA; V_CE = 5 V;
f = 500 MHz
junction temperature
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.




20





TYP.




50
1
4
15.5
2.4

MAX.
15
12
50
300



UNIT
V
V
mA
mW
pF
GHz

dB

dB
150
C
March 1994
2