BFT93W_15 Datasheet, PDF (18/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 15 Common emitter scattering parameters: V_CE = 10 V; I_C = 30 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.617
39.1
28.045
153.9
0.017
73.1
0.797
22.6
100
0.529
82.4
20.389
129.6
0.032
60.3
0.583
44.1
200
0.464
120.8
12.630
110.4
0.047
56.4
0.364
59.3
300
0.449
139.7
8.920
101.0
0.058
57.3
0.259
66.3
400
0.446
151.0
6.853
94.8
0.069
59.4
0.204
71.2
500
0.446
158.1
5.569
90.3
0.081
60.9
0.174
75.0
600
0.448
163.5
4.694
86.5
0.092
62.2
0.158
77.2
700
0.449
167.8
4.060
83.3
0.103
63.0
0.147
77.7
800
0.450
171.7
3.579
80.4
0.115
63.6
0.139
77.1
900
0.452
175.1
3.204
77.7
0.126
63.8
0.131
75.9
1 000
0.456
178.5
2.902
75.4
0.136
64.1
0.122
75.0
1 200
0.472
175.9
2.448
70.8
0.157
64.3
0.103
77.7
1 400
0.488
171.7
2.134
66.6
0.176
64.2
0.097
87.1
1 600
0.498
168.1
1.898
62.5
0.194
63.6
0.106
94.6
1 800
0.502
164.0
1.721
59.1
0.211
63.4
0.112
95.7
2 000
0.516
159.3
1.580
56.0
0.229
63.5
0.108
98.0
2 200
0.539
155.4
1.464
53.2
0.245
63.7
0.103
108.1
2 400
0.562
152.9
1.362
50.2
0.260
63.6
0.116
121.5
2 600
0.575
151.2
1.273
47.4
0.272
63.0
0.141
127.4
2 800
0.573
148.4
1.217
44.5
0.287
62.9
0.162
127.3
3 000
0.576
144.7
1.164
42.0
0.305
62.6
0.172
128.1
G_UM
(dB)
35.4
29.4
23.7
20.3
17.9
16.0
14.5
13.2
12.1
11.2
10.3
8.9
7.8
6.9
6.0
5.4
4.8
4.4
3.9
3.5
3.2
Table 16 Noise data: V_CE = 10 V; I_C = 30 mA.
f
(MHz)
F_min
(dB)
500
3.60
1 000
4.20
_opt
(ratio)
(deg)
0.250
101.0
0.310
143.0
R_n
0.550
0.480
March 1994
18