BFT93W_15 Datasheet, PDF (12/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 3 Common emitter scattering parameters: V_CE = 5 V; I_C = 10 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.608
31.5
18.195
160.2
0.020
75.6
0.900
18.0
100
0.571
72.1
15.044
138.8
0.041
60.6
0.725
38.4
200
0.538
114.5
10.475
117.4
0.059
51.1
0.490
56.6
300
0.531
136.1
7.676
106.0
0.070
49.3
0.360
66.3
400
0.531
149.0
5.989
98.6
0.079
50.2
0.287
73.0
500
0.532
157.3
4.907
93.2
0.088
51.8
0.245
77.9
600
0.534
163.6
4.161
88.9
0.097
53.8
0.221
81.4
700
0.533
168.6
3.613
85.1
0.106
55.4
0.204
83.2
800
0.532
172.9
3.195
81.8
0.116
56.9
0.192
84.2
900
0.534
176.8
2.866
78.8
0.125
58.1
0.179
84.5
1 000
0.535
179.7
2.603
76.2
0.135
59.3
0.167
85.3
1 200
0.545
173.7
2.206
71.2
0.153
61.0
0.145
90.1
1 400
0.557
169.2
1.931
66.6
0.172
62.0
0.140
98.7
1 600
0.561
165.5
1.724
62.2
0.191
62.3
0.149
104.6
1 800
0.563
161.2
1.570
58.5
0.208
62.7
0.154
106.3
2 000
0.574
156.6
1.447
55.2
0.227
63.2
0.150
109.4
2 200
0.593
153.0
1.343
52.4
0.244
63.7
0.148
117.9
2 400
0.612
150.6
1.251
49.2
0.260
64.0
0.165
127.5
2 600
0.620
148.8
1.171
46.3
0.274
63.5
0.192
131.8
2 800
0.616
146.0
1.122
43.2
0.290
63.3
0.213
132.1
3 000
0.618
142.3
1.074
40.7
0.309
63.2
0.223
133.3
G_UM
(dB)
34.4
28.5
23.1
19.7
17.4
15.5
14.1
12.8
11.7
10.7
9.9
8.5
7.4
6.5
5.7
5.0
4.5
4.1
3.6
3.3
2.9
Table 4 Noise data: V_CE = 5 V; I_C = 10 mA.
f
(MHz)
F_min
(dB)
500
2.40
1 000
2.90
(ratio)
0.304
0.321
_opt
(deg)
94.7
136.9
R_n
0.430
0.270
March 1994
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