BFT93W_15 Datasheet, PDF (17/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 13 Common emitter scattering parameters: V_CE = 10 V; I_C = 20 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.655
33.6
25.207
156.9
0.018
74.2
0.840
20.3
100
0.568
73.8
19.459
133.9
0.035
61.0
0.644
41.3
200
0.487
113.4
12.634
113.7
0.050
54.9
0.416
58.0
300
0.463
134.1
9.050
103.5
0.061
55.1
0.299
66.3
400
0.456
146.7
6.997
96.9
0.072
56.9
0.236
72.0
500
0.453
154.7
5.702
92.1
0.082
58.5
0.200
76.3
600
0.453
161.0
4.818
88.2
0.093
60.0
0.179
79.0
700
0.451
165.7
4.171
84.8
0.104
61.0
0.165
79.9
800
0.451
169.9
3.683
81.8
0.115
61.8
0.155
79.9
900
0.452
173.7
3.297
79.0
0.126
62.4
0.143
79.0
1 000
0.454
177.3
2.986
76.6
0.137
62.9
0.132
78.5
1 200
0.467
176.6
2.521
71.9
0.157
63.4
0.110
81.6
1 400
0.482
172.4
2.200
67.6
0.176
63.4
0.103
90.5
1 600
0.490
168.8
1.956
63.6
0.195
62.8
0.110
97.4
1 800
0.493
164.8
1.774
60.1
0.212
62.7
0.114
98.0
2 000
0.505
159.8
1.630
56.8
0.230
62.7
0.109
100.1
2 200
0.528
155.9
1.509
54.1
0.245
62.8
0.103
109.7
2 400
0.550
153.6
1.405
51.0
0.260
62.7
0.115
122.8
2 600
0.563
151.9
1.312
48.1
0.273
62.2
0.141
128.2
2 800
0.562
149.2
1.253
45.2
0.287
62.0
0.160
127.8
3 000
0.565
145.8
1.199
42.6
0.305
61.7
0.169
128.3
G_UM
(dB)
35.8
29.8
24.0
20.6
18.2
16.3
14.8
13.5
12.4
11.4
10.6
9.2
8.0
7.1
6.2
5.6
5.0
4.6
4.1
3.7
3.4
Table 14 Noise data: V_CE = 10 V; I_C = 20 mA.
f
(MHz)
F_min
(dB)
500
3.00
1 000
3.60
(ratio)
0.240
0.320
_opt
(deg)
98.0
131.0
R_n
0.440
0.400
March 1994
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