BFT93W_15 Datasheet, PDF (11/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 1 Common emitter scattering parameters: V_CE = 5 V; I_C = 5 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.759
20.5
11.294
165.0
0.023
78.5
0.945
12.3
100
0.711
49.0
10.079
147.7
0.050
64.5
0.834
27.8
200
0.630
88.0
8.082
126.7
0.076
51.2
0.631
44.0
300
0.586
113.6
6.355
113.1
0.090
45.1
0.491
52.8
400
0.566
130.5
5.116
104.1
0.099
42.9
0.403
58.5
500
0.557
141.8
4.266
97.5
0.107
42.8
0.349
62.5
600
0.551
150.5
3.653
92.2
0.113
43.7
0.316
65.2
700
0.546
157.1
3.193
87.7
0.120
44.9
0.293
66.8
800
0.543
162.7
2.838
83.9
0.127
46.2
0.277
67.7
900
0.541
167.6
2.551
80.4
0.133
47.6
0.263
68.1
1 000
0.541
172.0
2.323
77.4
0.140
49.1
0.249
68.7
1 200
0.549
179.4
1.975
71.7
0.153
51.6
0.223
71.8
1 400
0.559
174.8
1.737
66.4
0.168
53.8
0.212
78.3
1 600
0.565
170.3
1.555
61.7
0.183
55.2
0.215
84.5
1 800
0.566
165.6
1.420
57.7
0.197
56.8
0.220
87.5
2 000
0.575
160.5
1.310
54.2
0.213
58.3
0.215
91.0
2 200
0.594
156.3
1.217
51.1
0.228
59.7
0.208
98.1
2 400
0.613
153.7
1.135
47.7
0.242
60.6
0.217
107.7
2 600
0.623
151.4
1.064
44.8
0.255
60.9
0.242
114.1
2 800
0.618
148.2
1.019
41.7
0.271
61.5
0.264
116.9
3 000
0.621
144.5
0.975
39.3
0.289
61.9
0.275
119.3
G_UM
(dB)
34.5
28.3
22.5
19.1
16.6
14.8
13.3
12.0
10.9
9.9
9.1
7.7
6.6
5.7
4.9
4.3
3.8
3.4
2.9
2.6
2.2
Table 2 Noise data: V_CE = 5 V; I_C = 5 mA.
f
(MHz)
F_min
(dB)
500
1.80
1 000
2.55
_opt
(ratio)
(deg)
0.307
86.5
0.358
121.0
R_n
0.320
0.280
March 1994
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