BFT93W_15 Datasheet, PDF (13/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 5 Common emitter scattering parameters: V_CE = 5 V; I_C = 20 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.450
49.1
25.274
154.6
0.018
72.5
0.830
24.1
100
0.475
99.1
18.682
130.2
0.034
59.2
0.608
47.9
200
0.502
135.9
11.661
110.7
0.047
54.5
0.379
67.2
300
0.516
151.8
8.244
101.0
0.058
55.6
0.270
77.9
400
0.526
161.1
6.342
94.7
0.068
58.1
0.215
86.1
500
0.530
167.1
5.156
90.2
0.079
60.1
0.185
92.5
600
0.534
171.9
4.350
86.3
0.089
61.9
0.169
96.7
700
0.535
175.7
3.768
83.0
0.101
63.2
0.157
98.7
800
0.536
179.1
3.326
80.1
0.112
64.0
0.147
99.8
900
0.538
177.7
2.980
77.3
0.123
64.8
0.137
100.5
1 000
0.541
174.9
2.703
74.9
0.134
65.4
0.127
101.9
1 200
0.554
169.8
2.285
70.3
0.154
66.2
0.111
109.1
1 400
0.566
166.1
1.995
65.9
0.175
66.6
0.112
118.8
1 600
0.571
162.6
1.777
61.7
0.195
66.0
0.125
122.9
1 800
0.573
158.8
1.616
58.2
0.214
66.0
0.130
123.1
2 000
0.585
154.4
1.488
55.0
0.234
66.1
0.127
126.2
2 200
0.604
151.0
1.380
52.4
0.252
66.2
0.130
135.1
2 400
0.624
148.8
1.285
49.4
0.268
66.2
0.152
143.0
2 600
0.633
147.1
1.200
46.6
0.282
65.5
0.180
144.7
2 800
0.626
144.3
1.148
43.5
0.299
65.0
0.199
143.3
3 000
0.629
140.8
1.100
41.0
0.319
64.7
0.208
143.7
G_UM
(dB)
34.1
28.5
23.3
20.0
17.7
15.8
14.4
13.1
12.0
11.1
10.2
8.8
7.7
6.8
6.0
5.3
4.8
4.4
3.9
3.5
3.2
Table 6 Noise data: V_CE = 5 V; I_C = 20 mA.
f
(MHz)
F_min
(dB)
500
2.80
1 000
3.60
_opt
(ratio)
(deg)
0.301
100.8
0.356
152.2
R_n
0.610
0.280
March 1994
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