BFT93W_15 Datasheet, PDF (14/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 7 Common emitter scattering parameters: V_CE = 5 V; I_C = 30 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.382
62.3
28.063
151.4
0.016
71.2
0.781
27.1
100
0.453
113.1
19.479
126.1
0.030
58.8
0.543
51.8
200
0.502
144.8
11.682
107.7
0.043
56.8
0.327
70.7
300
0.521
158.0
8.162
98.8
0.054
58.9
0.232
81.5
400
0.532
165.8
6.248
92.9
0.065
61.4
0.185
89.9
500
0.537
170.8
5.069
88.6
0.076
63.4
0.161
96.5
600
0.542
174.9
4.269
84.9
0.088
65.0
0.148
100.5
700
0.543
178.2
3.692
81.7
0.099
65.8
0.139
102.3
800
0.545
178.7
3.258
78.8
0.111
66.4
0.131
103.2
900
0.548
176.0
2.917
76.1
0.122
67.0
0.123
103.6
1 000
0.552
173.2
2.644
73.8
0.133
67.4
0.114
104.8
1 200
0.565
168.6
2.233
69.2
0.154
68.0
0.101
112.5
1 400
0.577
165.0
1.948
64.9
0.175
68.2
0.105
121.9
1 600
0.584
161.7
1.734
60.8
0.195
67.5
0.119
125.4
1 800
0.586
157.9
1.577
57.3
0.214
67.3
0.125
125.0
2 000
0.598
153.6
1.451
54.2
0.234
67.3
0.124
128.3
2 200
0.620
150.3
1.345
51.5
0.252
67.5
0.129
137.0
2 400
0.639
148.1
1.251
48.7
0.269
67.5
0.152
144.6
2 600
0.646
146.3
1.169
46.0
0.284
66.6
0.181
146.1
2 800
0.642
143.4
1.118
43.0
0.300
66.2
0.200
144.7
3 000
0.644
139.8
1.071
40.5
0.321
65.7
0.210
145.0
G_UM
(dB)
33.7
28.3
23.1
19.8
17.5
15.7
14.2
13.0
11.9
10.9
10.1
8.7
7.6
6.7
5.8
5.2
4.8
4.3
3.8
3.4
3.1
Table 8 Noise data: V_CE = 5 V; I_C = 30 mA.
f
(MHz)
F_min
(dB)
500
3.40
1 000
4.20
_opt
(ratio)
(deg)
0.308
104.2
0.380
164.0
R_n
0.830
0.310
March 1994
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