BFT93W_15 Datasheet, PDF (15/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 9 Common emitter scattering parameters: V_CE = 10 V; I_C = 5 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.837
16.8
11.098
166.4
0.020
80.4
0.947
10.2
100
0.781
40.2
10.061
150.4
0.046
67.6
0.856
23.6
200
0.670
73.9
8.331
130.4
0.073
54.7
0.674
38.2
300
0.592
98.6
6.727
116.7
0.088
48.3
0.537
46.3
400
0.547
116.1
5.490
107.3
0.098
45.8
0.447
51.2
500
0.523
128.7
4.616
100.5
0.106
45.2
0.389
54.5
600
0.507
138.6
3.971
94.9
0.114
45.6
0.352
56.5
700
0.495
146.1
3.476
90.3
0.121
46.4
0.327
57.6
800
0.487
152.5
3.094
86.3
0.129
47.3
0.309
58.0
900
0.481
158.1
2.782
82.6
0.136
48.2
0.294
57.8
1 000
0.478
163.1
2.532
79.5
0.143
49.3
0.279
57.8
1 200
0.483
171.8
2.155
73.7
0.156
51.0
0.250
59.2
1 400
0.493
178.2
1.895
68.4
0.171
52.4
0.234
63.8
1 600
0.499
176.9
1.694
63.6
0.185
53.2
0.232
69.2
1 800
0.501
172.0
1.541
59.6
0.198
54.4
0.233
71.8
2 000
0.509
166.5
1.418
55.9
0.212
55.5
0.227
74.1
2 200
0.529
161.8
1.317
52.6
0.224
56.5
0.215
79.5
2 400
0.550
158.8
1.228
49.0
0.236
57.2
0.215
88.7
2 600
0.564
156.7
1.148
45.9
0.246
57.5
0.232
96.4
2 800
0.564
153.7
1.100
42.8
0.259
58.2
0.253
100.1
3 000
0.569
150.0
1.051
40.2
0.274
58.9
0.262
102.7
G_UM
(dB)
36.0
29.9
23.6
19.9
17.3
15.4
13.8
12.5
11.4
10.4
9.5
8.1
7.0
6.1
5.3
4.6
4.0
3.6
3.1
2.8
2.4
Table 10 Noise data: V_CE = 10 V; I_C = 5 mA.
f
(MHz)
F_min
(dB)
500
2.00
1 000
2.50
(ratio)
0.340
0.380
_opt
(deg)
73.0
105.0
R_n
0.440
0.360
March 1994
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