BFT93W_15 Datasheet, PDF (16/22 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT93W
Table 11 Common emitter scattering parameters: V_CE = 10 V; I_C = 10 mA.
s₁₁
s₂₁
s₁₂
s₂₂
f
(MHz) ^{MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE}
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.744
24.2
18.034
162.0
0.019
77.2
0.902
15.2
100
0.666
56.4
15.339
142.3
0.040
63.6
0.757
33.0
200
0.556
95.4
11.171
121.0
0.059
53.5
0.533
49.6
300
0.507
119.1
8.353
109.0
0.071
50.8
0.398
57.9
400
0.485
134.4
6.576
101.2
0.081
51.0
0.319
63.2
500
0.474
144.5
5.412
95.6
0.090
52.2
0.272
66.9
600
0.469
152.4
4.597
91.1
0.099
53.7
0.243
69.2
700
0.465
158.4
3.997
87.2
0.108
54.9
0.224
70.3
800
0.461
163.5
3.537
83.9
0.118
56.1
0.209
70.3
900
0.459
168.1
3.170
80.8
0.128
57.0
0.196
69.7
1 000
0.460
172.3
2.875
78.2
0.137
57.8
0.183
69.3
1 200
0.469
179.3
2.435
73.1
0.155
59.1
0.157
71.0
1 400
0.482
175.4
2.130
68.4
0.173
59.8
0.144
77.4
1 600
0.488
171.5
1.898
64.1
0.191
59.7
0.147
83.7
1 800
0.489
167.2
1.723
60.4
0.207
59.9
0.150
85.2
2 000
0.501
162.2
1.584
57.0
0.224
60.3
0.144
87.1
2 200
0.522
158.0
1.469
54.0
0.239
60.6
0.134
94.3
2 400
0.543
155.4
1.367
50.7
0.253
60.7
0.140
106.3
2 600
0.557
153.8
1.278
47.8
0.264
60.3
0.162
113.7
2 800
0.556
151.0
1.222
44.7
0.278
60.4
0.183
115.3
3 000
0.560
147.6
1.168
42.1
0.295
60.4
0.192
116.6
G_UM
(dB)
35.9
30.0
24.0
20.5
18.0
16.1
14.6
13.3
12.2
11.2
10.4
8.9
7.8
6.8
6.0
5.3
4.8
4.3
3.9
3.5
3.1
Table 12 Noise data: V_CE = 10 V; I_C = 10 mA.
f
(MHz)
F_min
(dB)
500
2.40
1 000
2.90
(ratio)
0.270
0.350
_opt
(deg)
83.0
115.0
R_n
0.400
0.350
March 1994
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