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TDA8020HL Datasheet, PDF (13/24 Pages) NXP Semiconductors – Dual smart card interface
Philips Semiconductors
Dual smart card interface
Product specification
TDA8020HL
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient in free air
VALUE
80
UNIT
K/W
CHARACTERISTICS
VDD = 3.3 V; VDDI = 1.5 V; fCLKIN1 = fCLKIN2 = 10 MHz; GND = 0 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
Temperature
Tamb
ambient temperature
−25
Supply
VDD
supply voltage on pins VDD
2.5
and VDDA
IDD
supply current (IDD and IDDA) inactive mode
−
Power-down mode; 2 cards
−
activated; VCC1 = VCC2 = 5 V;
ICC1 = ICC2 = 100 µA; CLK1 and
CLK2 stopped
active mode; VCC1 = VCC2 = 5 V; −
ICC1 + ICC2 = 80 mA;
CLK1 = CLK2 = 5 MHz
active mode; VCC1 = VCC2 = 3 V; −
ICC1 = ICC2 = 10 mA;
CLK1 = CLK2 = 5 MHz
VDDI
supply voltage for interface
1.5
signals
IDDI
supply current for interface
−
signals
Vth1
threshold voltage on VDD
falling
2.1
Vhys1
hysteresis on Vth1
50
Vth2
threshold voltage on
−
pin CDEL
VCDEL
voltage on pin CDEL
−
ICDEL
output current at pin CDEL pin grounded (charge)
−
VCDEL = VDD (discharge)
−
tW
width of the internal ALARM CDEL = 22 nF
−
pulse
−
+85
−
6.5
−
150
−
2.5
−
400
−
80
−
VDD
−
120
−
2.4
−
100
1.38 −
−
VDD + 0.3
−2
−
5
−
10
−
DC/DC converter
fint
internal oscillator frequency
VUP
voltage on pin VUP
at least one 5 V card
both cards 3 V
Vdt
detection voltage for doubler,
tripler and follower selection
2
2.5 3
−
5.5 −
−
4
−
−
3.4 −
UNIT
°C
V
µA
mA
mA
mA
V
µA
V
mV
V
V
µA
mA
ms
MHz
V
V
V
2001 Aug 15
13