UPD70F3212 Datasheet, PDF (743/861 Pages) NEC – 32-Bit Single-Chip Microcontrollers

CHAPTER 28 ELECTRICAL SPECIFICATIONS (256 KB MASK ROM VERSION, SINGLE-POWER FLASH MEMORY VERSION) (TARGET)
Flash Memory Programming Characteristics
(TA = −10 to +65°C, VDD = EVDD = AVREF0 = 2.7 to 5.5 V, 2.7 V ≤ BVDD ≤ VDD, 2.7 V ≤ AVREF1 ≤ VDD, VSS = EVSS = BVSS
= AVSS = 0 V, CL = 50 pF)
(1) Basic characteristics
Parameter
Symbol
Conditions
MIN.
TYP. MAX.
Unit
Programming operation
frequency
REGC = VDD = 4.5 to 5.5 V
2
REGC = VDD = 4.0 to 5.5 V
2
20
MHz
16
MHz
REGC = Capacity, VDD = 4.0 to 5.5 V
2
8^{Note 1}
MHz
REGC = VDD = 2.7 to 5.5 V
2
8^{Note 1}
MHz
Supply voltage
VDD
2.7
5.5
V
Overall erase time
tERA
T.B.D.
s
Write time
tWRW
T.B.D.
s
Number of rewrites
CERWR Note 2
100
Times
Notes 1. These values may change after evaluation.
2. When writing initially to shipped products, it is counted as one rewrite for both “erase to write” and “write
only”.
Example (P: Write, E: Erase)
Shipped product →P→E→P→E→P: 3 rewrites
Shipped product → E →P→E→P→E→P: 3 rewrites
User’s Manual U16890EJ1V0UD
743