PIC16F676-I Datasheet, PDF (94/132 Pages) Microchip Technology – 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers

PIC16F630/676
12.7 DC Characteristics: PIC16F630/676-I (Industrial), PIC16F630/676-E (Extended)
(Cont.)
DC CHARACTERISTICS
Param
No.
Sym
Characteristic
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  TA  +125°C for extended
Min Typ† Max Units
Conditions
D100
D101
D120
D120A
D121
D122
D123
D124
D130
D130A
D131
D132
D133
D134
*
†
Capacitive Loading Specs
on Output Pins
COSC2 OSC2 pin
—
—
15* pF In XT, HS and LP modes when
external clock is used to drive
OSC1
CIO All I/O pins
—
—
50* pF
Data EEPROM Memory
ED Byte Endurance
100K 1M
— E/W -40C  TA +85°C
ED Byte Endurance
10K 100K
— E/W +85°C  TA +125°C
VDRW VDD for Read/Write
VMIN
—
5.5 V Using EECON to read/write
VMIN = Minimum operating
voltage
TDEW Erase/Write cycle time
—
5
6 ms
TRETD Characteristic Retention
40
—
— Year Provided no other specifications
are violated
TREF Number of Total Erase/Write 1M
Cycles before Refresh⁽¹⁾
10M
— E/W -40C  TA +85°C
Program Flash Memory
EP Cell Endurance
10K 100K
— E/W -40C  TA +85°C
ED Cell Endurance
1K
10K
— E/W +85°C  TA +125°C
VPR VDD for Read
VMIN
—
5.5 V VMIN = Minimum operating
voltage
VPEW VDD for Erase/Write
4.5
—
5.5 V
TPEW Erase/Write cycle time
—
2
2.5 ms
TRETD Characteristic Retention
40
—
— Year Provided no other specifications
are violated
These parameters are characterized but not tested.
Data in ‘Typ’ column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: See Section 8.5.1 for additional information.
DS40039F-page 94
 2010 Microchip Technology Inc.